Characteristics of HgCdTe epilayer grown by LPE using horizontal slider

Bulletin of materials science

S C Gupta¹  J K Radhakrishnan¹  S Sitharaman¹ 

[1] Solid State Physics Laboratory, Lucknow Road, Delhi 110 054, India$$Solid State Physics Laboratory, Lucknow Road, Delhi 110 054, IndiaSolid State Physics Laboratory, Lucknow Road, Delhi 110 054, India$$

关键词: HgCdTe;    LPE;    characterization.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

The characteristics of HgCdTe epilayers grown in a modified horizontal slider system, are reported here. The surface morphology of the grown layers, their IR transmission characteristics, depth and lateral compositional uniformity, structural and electrical characteristics are discussed.

【 授权许可】

Unknown