Some properties of near-surface layer of graded-gap MBE HgCdTe after boron ion implantation

5th International Congress on Energy Fluxes and Radiation Effects 2016

Voitsekhovskii, A.V.^1 ; Nesmelov, S.N.^1 ; Dzyadukh, S.M.^1 ; Izhnin, I.I.^1,2

National Research Tomsk State University, Tomsk, Russia^1

Scientific Research Company Carat, Lviv, Ukraine^2

关键词: B-y Ions;    Boron Ion implantation;    Boron ions;    HgCdTe;    HgCdTe films;    Ion etching;    MIS structure;    Near-surface layers;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/830/1/012081/pdf
DOI  :  10.1088/1742-6596/830/1/012081

来源: IOP

【 摘 要 】

The effect of ion implantation of boron ions with an energy of 100 keV and a dose of (1-6)×1015cm-2in the MBE HgCdTe films on the characteristics of the MIS structures based on these films was investigated. The changes of the conductivity type in the near-surface layer of HgCdTe after ion implantation of boron and etching by ions of argon were detected. The concentrations of the major charge carriers in the near-surface layer of the epitaxial films after ion implantation and after ion etching were close to 5.88×1016cm-3and 2.47×1017cm-3, respectively.