Investigation of structural properties of layered III-nitride semiconductor materials by high resolution X-rays diffraction

International Journal of Physical Sciences

S. Ndiaye¹ 

关键词: X-ray diffraction;    heterostructure;    superlattice;    III-nitride;    lattice parameter;    relaxation state.;   

DOI  :  10.5897/IJPS10.271

学科分类：物理（综合）

来源: Academic Journals

【 摘 要 】

High resolution X-ray diffraction (HRXRD) was used to investigate the structural properties of group III-nitride semiconductors, and was shown to give separable information on crystalline quality as well as on chemical composition, residual stresses, etc. Contributions from the various structural parameters to the HRXRD diagram profile, although mixed to each other, have been sorted out. Through the examples of GaN/InxAl1-xN/GaN heterostructures and AlxGa1-xN/GaN superlattices (SLs), grown by metal-organic chemical vapour deposition, it has been shown that all the structural parameters of III-nitrides are deducible from HRXRD combined with simulation methods.

【 授权许可】

CC BY