Effect of Substrate Orientation on the Growth Direction of In x Ga1-x As Nanowires (NWs)

7th Nanoscience and Nanotechnology Symposium

物理学;材料科学

Wibowo, E.^1 ; Ulya, N.^1 ; Othaman, Z.^2 ; Marwoto, P.^3 ; Sumpono, I.^3 ; Aji, M.P.^3 ; Sulhadi^3 ; Astuti, B.^3 ; Rokhmat, M.^1 ; Suwandi^1 ; Ismardi, A.^1 ; Sutisna^4

Engineering Physics, School of Electrical Engineering, Telkom University, Jalan Telekomunikasi No.1, Bandung, Terusan Buah Batu, Indonesia^1

Department of Physics, Faculty of Sciences, Universiti Teknologi Malaysia (UTM), Johor Bahru, Skudai, Malaysia^2

Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang (UNNES), Gunungpati, Semarang, Indonesia^3

Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Jember, East Java, Indonesia^4

关键词: GaAs(1 0 0);    Growth directions;    Nanowires (NWs);    Substrate orientation;    Vapor-solid;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/395/1/012003/pdf
DOI  :  10.1088/1757-899X/395/1/012003

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

We have grown the InxGal-xAs NWs on GaAs(lll), GaAs(100) and Si(lll) substrates via Vapor-Solid-Solid (VSS) mode using MOCVD. We observed that the cylindrical NWs grow perpendicular to the GaAs(lll) substrate. The straight line NWs with an angle of 50.60° to the normal were occurred on GaAs(l00), while kinks NWs were perceived on Si(lll). We found that the growth direction of the InxGal-xAs NWs can be easily controlled using certain orientation of the substrate by considering its lattice mismatch and its surface energy.