Mn-assisted molecular-beam epitaxy growth (Ga,Mn)As nanowires

18th International Conference PhysicA.SPb

Reznik, R.R.^1,2,5 ; Samsonenko, Yu.B.^1,4 ; Khrebtov, A.I.^1 ; Bouravleuv, A.D.^1,3 ; Werner, P.^6 ; Cirlin, G.E.^1,4,5

St-Petersburg Academic University-Nanotechnology Research and Education Centre RAS, Khlopina 8/3, St-Petersburg

194021, Russia^1

Peter the Great St.Petersburg Polytechnic University, Polytechnicheskaya 29, St-Petersburg

195251, Russia^2

Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, St-Petersburg

194021, Russia^3

Institute for Analytical Instrumentation RAS, Rizhsky 26, St-Petersburg

190103, Russia^4

ITMO University, Kronverkskiy pr. 49, St-Petersburg

197101, Russia^5

Max Planck Institute of Microstructure Physics, Weinberg 2, Halle

D-06120, Germany^6

关键词: Crystallographic phase;    Ex situ;    GaAs(1 0 0);    Substrate temperature;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/769/1/012077/pdf
DOI  :  10.1088/1742-6596/769/1/012077

来源: IOP

【 摘 要 】

Arrays of (Ga,Mn)As crystal nanowires on a GaAs (100) substrate were obtained using molecular-beam epitaxy at the substrate temperature 485°C. From the high energy electron diffraction patterns, the crystallographic phase of the nanowires is detected to be cubic which is supporting by ex situ microscopy study.