Indium (In) Effects to The Efficiency Performance of Ga1-XInxP/GaAs Based Solar Cell Using Silvaco Software Modelling & Simulation

International Conference on Innovative Research - ICIR Euroinvent 2017

Norizan, M.N.^1,2,3 ; Zahari, S.M.^1 ; Mohamad, I.S.^1,2,3 ; Osman, R.A.M.^1 ; Shahimin, M.M.^4 ; Murad, S.A.Z.^1

School of Microelectronic Engineering, Universiti Malaysia Perlis, Pauh Putra Campus, Arau, Perlis

02600, Malaysia^1

Centre of Excellence Geopolymer and Green Technology (CeGeoGTech), Universiti Malaysia Perlis, Perlis, Malaysia^2

Advanced Multi-Disciplinary MEMS-Based Integrated NCER Centre of Excellence (AMBIENCE), Universiti Malaysia Perlis, Perlis, Malaysia^3

Department of Electrical and Electronic Engineering, Faculty of Engineering, National Defence University of Malaysia (UPNM), Kem Sungai Besi, Kuala Lumpur

57000, Malaysia^4

关键词: Band gap energy;    Effect of In;    Multi-junctions;    Photon absorptions;    Silvaco simulation;    Software modelling;    Solar cell efficiencies;    Solar-cell applications;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/209/1/012029/pdf
DOI  :  10.1088/1757-899X/209/1/012029

来源: IOP

【 摘 要 】

Ga1-xInxP composition has been applied to the top cell of multi-junction GaInP/GaAs based solar cell and currently have achieving a conversion efficiency of more than 46%, however its capability is unclear. We performed an analysis using Silvaco simulation method to evaluate the effect of In and the substitution was made to the Ga1-xInxP for the range of x from 0 to 1. We found that the highest efficiency recorded was 17.66% when the composition of Indium was x=1. The efficiency has been increasing about 11.71% from x=0 to x=1 In content. As the composition of In raised, the value of efficiency and short circuit current density, Jsc also become higher (13.60 mA/cm2) by having a greater photon absorption in a wider band gap energy. In addition to that, Voc, Pmax, Vmax, Imaxand fill factor was measured to be 2.15 V, 2.44 mW/cm2, 2.0 V, 1.22 mA/cm2and 83.34 respectively. In conclusion, this study confirms that the existence of In in Ga1-xInxP improves the solar cell efficiency by gaining a higher energy gap and producing more electrons for best achievement in multilayer solar cell applications.