Simulation of photovoltaic efficiency of a tandem solar cell on Si with GaN nanowires as an emitter layer

17th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Mozharov, A.M.^1 ; Bolshakov, A.D.^1 ; Cirlin, G.E.^1,2,3,4 ; Kudryashov, D.A.^1 ; Gudovskikh, A.S.^1,5 ; Mukhin, I.S.^1,6 ; Alferov, Zh I^1

St. Petersburg Academic University, St. Petersburg

194021, Russia^1

Institute for Analytical Instrumentation, RAS, St. Petersburg

190103, Russia^2

St. Petersburg State University, St. Petersburg

199034, Russia^3

St. Petersburg State Polytechnical University, St. Petersburg

195251, Russia^4

St. Petersburg Electrotechnical University LETI, St. Petersburg

197376, Russia^5

ITMO University, St. Petersburg

197101, Russia^6

关键词: Anti-reflection;    High potential;    Lattice-matched;    Multi-junctions;    Photo-voltaic efficiency;    Photovoltaic property;    Si solar cells;    Tandem solar cells;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/690/1/012041/pdf
DOI  :  10.1088/1742-6596/690/1/012041

来源: IOP

【 摘 要 】

Modeling of photovoltaic properties of multi-junction solar cells integrated on a Si substrate with an array of GaN nanowires as a top emitter has been carried out. Very good antireflection properties of the structure are demonstrated theoretically: the calculated reflectance is lower than 3% for both GaN nanowires/Si and GaN nanowires on GaPN/Si cells. According to our simulations, basic GaN nanowires on Si cell with optimised parameters (doping and NWs morphology) provides energy conversion efficiency of 20%. The approach demonstrates high potential of the GaPN(As)-based multi-junction lattice matched with Si solar cells using an array of GaN nanowires as a top emitter.