The effect of the In concentration on the surface morphology of InGaAs-GaAs heterostructures grown by MBE on GaAs substrate

21st Latin American Symposium on Solid State Physics

Gómez-Barojas, E.^1 ; Silva-González, R.^2 ; Serrano-Rojas, R.M.^1 ; Vidal-Borbolla, M.A.^3 ; Rodríguez-Moreno, M.A.^1 ; Santamaría-Juárez, G.^1

CIDS-IC, Benemérita Universidad Autónoma de Puebla, Apdo. Postal 196, Pue. 72000. Puebla, Mexico^1

Instituto de Física, Benemérita Universidad Autónoma de Puebla, Apdo. Postal J-48, Pue. 72570 Puebla, Mexico^2

Instituto de Investigación en Comunicación Óptica, Universidad Autónoma de San Luis Potosí, Av. Karakorum 1470, Col. Lomas Altas 4a Seccion, SLP, San-Luis-Potosi, 78100, Mexico^3

关键词: Auger electron spectroscopy depth profiles;    Cross-section images;    Effect of In;    Epitaxially grown;    GaAs substrates;    High magnifications;    Molecular beam epitaxial;    SEM micrographs;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/480/1/012038/pdf
DOI  :  10.1088/1742-6596/480/1/012038

来源: IOP

【 摘 要 】

A set of 3 heterostructures were formed by 10 periods of InGaAs-GaAs epitaxially grown on GaAs substrate by means of a molecular beam epitaxial system. Scanning electron microscopy (SEM) cross section images at high magnification show that the heterostructures present good periodicity. SEM micrographs of the surface morphology chemically etched show the coalescence effect of In due to an unequal etching rate of In and GaAs. Auger electron spectroscopy (AES) depth profiles show that the first GaAs layers in the 3 samples are off-stoichiometric and that the alloy layers present In square and triangular depth profiles.