Efficient positron moderation with a commercial 4H-SiC epitaxial layer

14th International Workshop on Slow Positron Beam Techniques & Applications

Leite, A.M.M.^1 ; Debu, P.^1 ; Pérez, P.^1 ; Reymond, J.-M.^1 ; Sacquin, Y.^1 ; Vallage, B.^1 ; Liszkay, L.^1

Irfu, CEA, University Paris-Saclay, Gif-sur-Yvette Cedex

F-91191, France^1

关键词: Energy distributions;    Epitaxially grown;    SiC single crystals;    Slow positron;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/791/1/012005/pdf
DOI  :  10.1088/1742-6596/791/1/012005

来源: IOP

【 摘 要 】

We have studied the properties of a commercially available 4H-SiC epitaxial layer and evaluated its potential application as an efficient positron remoderator. A remoderation efficiency of more than 65% has been measured for incident positrons with 1 keV energy. We have determined the work function and the energy distribution of the emitted slow positrons, a property which is essential for practical applications. Comparison of the positron moderation properties of the epitaxial layer with results from a n-type 4H-SiC single crystal, indicate that the epitaxially grown layer is a superior secondary moderator than its substrate counterpart.