Property of P-Induced Graphite Cluster in Sic During Irradiation

2018 4th International Conference on Environmental Science and Material Application

生态环境科学;材料科学

Wang, Pengfei^1 ; Li, Yang^2 ; Wang, Shuai^1

School of Science, Shandong Jiaotong University, Jinan, Shandong

250357, China^1

AECC Sichuan Gas Turbine Establishment, Mianyang, Sichuan

621000, China^2

关键词: Doped silicon;    Fluences;    Irradiated samples;    Raman peak;    Raman scattering spectroscopy;    SiC single crystals;    Stretching vibrations;   

Others  :  https://iopscience.iop.org/article/10.1088/1755-1315/252/2/022110/pdf
DOI  :  10.1088/1755-1315/252/2/022110

来源: IOP

【 摘 要 】

Raman scattering spectroscopy was used to study the effect of a phosphorus (P) impurity on the aggregation of displaced carbon (C) atoms into graphite clusters. The P-doped silicon carbide (SiC) samples at concentration of 1.0×1020 cm-3 were produced by ion implantation. The P-doped and P-free SiC single crystals were irradiated with two fluences of 1×1016 and 2×1016 cm-2 at room temperature. The Raman peaks at 1385 and 1562 cm-1 are observed for P-containing SiC. They originate from the breathing vibration of six-membered C rings and stretching vibration of C (sp2)-C (sp2) bonds. This reveal that the irradiation resulted in the formation of graphite clusters. The irradiated samples were isochronally annealed up to 500 °C to investigate the thermal stability. The thermal stability of graphite cluster is approximately 300-400 °C.