Plasma etching of single fine particle trapped in Ar plasma by optical tweezers

26th Symposium on Plasma Sciences for Materials

物理学;材料科学

Ito, T.^1 ; Koga, K.^1 ; Yamashita, D.^1 ; Kamataki, K.^2 ; Itagaki, N.^1,3 ; Uchida, G.^4 ; Shiratani, M.^1

Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Fukuoka, Nishi-ku, 819-0395, Japan^1

Faculty of Arts and Science, Kyushu University, 744 Motooka, Fukuoka, Nishi-ku, 819-0395, Japan^2

PRESTO, Japan Science and Technology Agency, Gobancho, Tokyo, Chiyoda-ku, 102-0076, Japan^3

Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Osaka, Ibaraki, 567-0047, Japan^4

关键词: Ar plasmas;    Chemical interactions;    Etching rate;    Fine particles;    In-situ analysis;    Raman peak;    Time evolutions;    Trapped particle;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/518/1/012014/pdf
DOI  :  10.1088/1742-6596/518/1/012014

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Physical and chemical interactions between plasmas and nano-featured surfaces are one important issue in the plasma processing. Here we optically trap single fine particle levitated at plasma/sheath boundary with an infrared laser to realize in-situ analysis of such interactions. We have measured time evolution of the diameter of the single fine particle in Ar plasma. The trapped particle was etched at an etching rate of 1 nm/min in Ar plasma. We also obtained a Raman peak at around 2950 cm-1corresponding to C-H bonds in the single fine particle in Ar plasma. The results open a new possibility to observe directly interactions between plasma and single fine particle.