Raman Scattering Study of Silicon Carbide Irradiated with 1.25 MeV Si Ions

2nd International Conference on Frontiers of Materials Synthesis and Processing

Wang, Pengfei^1 ; Wang, Shuai^1

School of Science, Shandong Jiaotong University, Jinan

250357, China^1

关键词: Crystalline-to-amorphous;    Defect complex;    Elevated temperature;    Lattice damage;    Raman peak;    SiC single crystals;    Thermal recovery;    Vibration modes;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/493/1/012092/pdf
DOI  :  10.1088/1757-899X/493/1/012092

来源: IOP

【 摘 要 】

Raman spectroscopy was performed to analyze the lattice damage and thermal recovery process of SiC single crystals irradiated by 1.25 MeV Si ions with a fluence of 1.0×1016 cm-2 at RT, 300°C, and 500°C. The ion irradiation at RT leads to the transformation of SiC from crystalline to amorphous state, which is demonstrated by the appearance of Si-Si, Si-C, and C-C vibration modes. For the irradiation at 300 and 500°C, two of predominant Raman peaks at 1355 and 1578 cm-1 are detected. This reveals that the irradiation at elevated temperatures can cause the formation of graphite clusters. The graphite cluster has a poor thermal stability and is removed after annealing at 400°C. The Raman peak at about 576 cm-1 appears after the annealing at 800°C. It could originate from CSiVC defect complex.