Electrical characterization of two-dimensional materials and their heterostructures

IEEE Radio and Antenna Days of the Indian Ocean

无线电电子学

Arora, H.^1,2 ; Schönherr, T.^1 ; Erbe, A.^1

Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, Dresden

01328, Germany^1

Technische Universität Dresden, Dresden

01062, Germany^2

关键词: Bulk crystals;    Electrical characterization;    Indium selenide;    Micro-mechanical;    Transport channel;    Two Dimensional (2 D);    Two-dimensional materials;    Ultra-thin;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/198/1/012002/pdf
DOI  :  10.1088/1757-899X/198/1/012002

来源: IOP

【 摘 要 】

Two-dimensional (2D) materials have gained enormous attention in recent years owing to their huge potential in future electronics and optics. On the one hand, conventional 2D materials like graphene, MoS2, h-BN are being intensively studied, on the other hand, search for novel 2D materials is at a rapid pace. In this study, we have investigated electrical properties of 2D nanosheets of ultrathin Indium Selenide (InSe), a member of the III-VI chalcogenides' family. The InSe layers were prepared via micromechanical cleavage of its bulk crystal and were integrated into a field-effect transistor (FET) device as the transport channel. On characterizing the InSe-based FETs, InSe showed n-type conductance with the mobility of 2.1×10-4cm2V-1s-1.