Photoluminescent tomography of ZnSe bulk crystals

17th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Gladilin, A.A.^1 ; Kalinushkin, V.P.^1 ; Uvarov, O.V.^1 ; Gavrischuk, E.M.^2 ; Timofeeva, N.A.^2

A. M. Prokhorov General Physics Institute O, Russian Academy of Sciences, 38 Vavilov Street, Moscow

119991, Russia^1

G. G. Devyatykh Institute of Chemistry of High-Purity Substances, Russian Academy of Sciences, 49 Troponina Street, Nizhny Novgorod

603950, Russia^2

关键词: 3d metals;    Bulk crystals;    Bulk semiconductors;    High potential;    Luminescence quenching;    Recombination activity;    Two photon;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/690/1/012003/pdf
DOI  :  10.1088/1742-6596/690/1/012003

来源: IOP

【 摘 要 】

High potential of two-photon confocal microscopy for photoluminescent tomography of bulk semiconductor crystals are demonstrated in this work using ZnSe crystals as an example. The first results of investigation of ZnSe bulk crystals, both undoped and doped by 3d metals, are presented. Appearance of luminescence quenching centres in specific parts of crystals and grain recombination activity are demonstrated by the proposed method; these phenomena cannot be detected by other luminescence-based methods.