Modeling of microporous silicon betaelectric converter with 63Ni plating in GEANT4 toolkit*

19th International Scientific Conference Reshetnev Readings 2015

Zelenkov, P.V.^1 ; Sidorov, V.G.^1 ; Lelekov, E.T.^1 ; Khoroshko, A.Y.^1 ; Bogdanov, S.V.^1 ; Lelekov, A.T.^1

Reshetnev Siberian State Aerospace University, Krasnoyarsky Rabochy av. 31, Krasnoyarsk

660037, Russia^1

关键词: Electron hole pairs;    Geant4 toolkits;    Generation rate;    Microporous silicon;    Pore configuration;    Ultra low energy;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/122/1/012036/pdf
DOI  :  10.1088/1757-899X/122/1/012036

来源: IOP

【 摘 要 】

The model of electron-hole pairs generation rate distribution in semiconductor is needed to optimize the parameters of microporous silicon betaelectric converter, which uses 63Ni isotope radiation. By using Monte-Carlo methods of GEANT4 software with ultra-low energy electron physics models this distribution in silicon was calculated and approximated with exponential function. Optimal pore configuration was estimated.