Electron-hole pairs generation rate estimation irradiated by isotope Nickel-63 in silicone using GEANT4

International Scientific and Research Conference on Topical Issues in Aeronautics and Astronautics (dedicated to the 55th anniversary from the foundation of SibSAU)

航空航天工程

Kovalev, I.V.^1 ; Sidorov, V.G.^2 ; Zelenkov, P.V.^2 ; Khoroshko, A.Y.^2 ; Lelekov, A.T.^2

Second Russian Doctoral Degree in Computer Sciences, Reshetnev Siberian State Aerospace University, Krasnoyarsk, Russia^1

Reshetnev Siberian State Aerospace University, Krasnoyarsk, Russia^2

关键词: Electron hole pairs;    Gauss function;    Generation rate;    Layer thickness;    Nickel-63;    Ultra low energy;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/94/1/012024/pdf
DOI  :  10.1088/1757-899X/94/1/012024

学科分类：航空航天科学

来源: IOP

【 摘 要 】

To optimize parameters of beta-electrical converter of isotope Nickel-63 radiation, model of the distribution of EHP generation rate in semiconductor must be derived. By using Monte-Carlo methods in GEANT4 system with ultra-low energy electron physics models this distribution in silicon calculated and approximated with Gauss function. Maximal efficient isotope layer thickness and maximal energy efficiency of EHP generation were estimated.