Reflectivity modulator based on GaSb/GaAs heterostructure

Frontiers in Theoretical and Applied Physics/UAE 2017

Rabbaa, S.^1

Department of Physics, Arab American University-Jenin (AAUJ), Palestine^1

关键词: Doped layers;    Free carriers;    Free electron;    Gallium antimonide;    Gold layer;    Incident light;    Layer structures;    Light reflectivity;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/869/1/012038/pdf
DOI  :  10.1088/1742-6596/869/1/012038

来源: IOP

【 摘 要 】

A structure of gallium antimonide (GaSb) and gallium arsenide (GaAs) wafers is built to modulate light reflectivity at CO2laser wavelength. A quantum well composed of GaSb/GaAs heterojunction with highly doped GaAs up to 3×1018cm-3is inserted inside a layer structure. A grating of periodic structure of GaAs and gold layer is added just below the substrate. Gsolver software is used to determine the reflectivity of incident light with the existence of free carriers. A voltage is applied to the doped layer to deplete the free electrons and the reflectivity is determined again. The significant difference in reflectivity between the two cases can be used to build a light reflectivity modulator device.