Quantum dot laser optimization: selectively doped layers

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Korenev, Vladimir V.^1 ; Konoplev, Sergey S.^1 ; Savelyev, Artem V.^1 ; Shernyakov, Yurii M.^1 ; Maximov, Mikhail V.^1 ; Zhukov, Alexey E.^1

Saint-Petersburg Academic University, Hlopina Str. 8/3A, Saint-Petersburg

194021, Russia^1

关键词: Analytical approach;    Doped layers;    Driftdiffusion equations;    Electrons and holes;    Ground state lasing;    High injection;    Numerical calculation;    Selective doping;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012075/pdf
DOI  :  10.1088/1742-6596/741/1/012075

来源: IOP

【 摘 要 】

Edge emitting quantum dot (QD) lasers are discussed. It has been recently proposed to use modulation p-doping of the layers that are adjacent to QD layers in order to control QD's charge state. Experimentally it has been proven useful to enhance ground state lasing and suppress the onset of excited state lasing at high injection. These results have been also confirmed with numerical calculations involving solution of drift-diffusion equations. However, deep understanding of physical reasons for such behavior and laser optimization requires analytical approaches to the problem. In this paper, under a set of assumptions we provide an analytical model that explains major effects of selective p-doping. Capture rates of elections and holes can be calculated by solving Poisson equations for electrons and holes around the charged QD layer. The charge itself is ruled by capture rates and selective doping concentration. We analyzed this self-consistent set of equations and showed that it can be used to optimize QD laser performance and to explain underlying physics.