Pattern characteristics and resolution of GaN sample through Parameter of Indirect Microscopic Imaging

6th conference on Advances in Optoelectronics and Micro/nano-optics

Yadav, N.P.^1 ; Liu, Xuefeng^1 ; Wang, Weize^1 ; Ullah, Kaleem^1 ; Xu, Bin^1

School of Electronic and Optical Engineering, Nanjing University of Science and Technology, 200 Xiaolingwei, Nanjing

210094, China^1

关键词: Depth of focus;    Diffraction limits;    Imaging method;    Microscopic imaging;    Nano resolution;    Optical imaging system;    Pattern characteristic;    Super resolution;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/844/1/012005/pdf
DOI  :  10.1088/1742-6596/844/1/012005

来源: IOP

【 摘 要 】

With smaller DOF (Depth of Focus) achieving focus at the center of the photoresist also became harder. Currently it is big issues to achieve, the super resolution by optical microscope because due to the diffraction limit. In this letter, the pattern characteristics and edge resolution of GaN sample has been studied through an indirect microscope. In this new discovery, we would like to see whether the etched part is fully etched without SiNx in the sample. Some Electronics microscope such as SEM, AFM have already developed for sub nano resolution. But due to time taken, more expensive, it is not easy to find every place. In this way, we proposed a new imaging method (PIMI), which is differ from all non-optical and traditional optical imaging system. We found that image resolution of GaN samples under measurement is near about 80 nm. All the measurements have been done by PIMI system.