会议论文详细信息
18th International Conference PhysicA.SPb | |
Effect of nitride chemical passivation of the surface of GaAs photodiodes on their characteristics | |
Kontrosh, E.V.^1 ; Lebedeva, N.M.^1 ; Kalinovskiy, V.S.^1 ; Soldatenkov, F.Yu.^1 ; Ulin, V.P.^1 | |
Ioffe Institute, 26 Polytekhnicheskaya, St.-Petersburg | |
194021, Russia^1 | |
关键词: Chemical passivation; Device characteristics; Nitride coating; Recombination process; | |
Others : https://iopscience.iop.org/article/10.1088/1742-6596/769/1/012068/pdf DOI : 10.1088/1742-6596/769/1/012068 |
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来源: IOP | |
【 摘 要 】
Characteristics of GaAs photodiodes have been studied before and after the chemical nitridation of their surface in hydrazine sulfide solutions, which leads to substitution of surface As atoms with N atoms to give a GaN monolayer. The resulting nitride coatings hinder the oxidation of GaAs in air and provide a decrease in the density of surface states involved in recombination processes. The device characteristics improved by nitridation are preserved during a long time.
【 预 览 】
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