Effect of nitride chemical passivation of the surface of GaAs photodiodes on their characteristics

18th International Conference PhysicA.SPb

Kontrosh, E.V.^1 ; Lebedeva, N.M.^1 ; Kalinovskiy, V.S.^1 ; Soldatenkov, F.Yu.^1 ; Ulin, V.P.^1

Ioffe Institute, 26 Polytekhnicheskaya, St.-Petersburg

194021, Russia^1

关键词: Chemical passivation;    Device characteristics;    Nitride coating;    Recombination process;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/769/1/012068/pdf
DOI  :  10.1088/1742-6596/769/1/012068

来源: IOP

【 摘 要 】

Characteristics of GaAs photodiodes have been studied before and after the chemical nitridation of their surface in hydrazine sulfide solutions, which leads to substitution of surface As atoms with N atoms to give a GaN monolayer. The resulting nitride coatings hinder the oxidation of GaAs in air and provide a decrease in the density of surface states involved in recombination processes. The device characteristics improved by nitridation are preserved during a long time.