Analysis of a bipolar energy-transport model for a metal-oxide-semiconductor diode

JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS

卷:378

Article

Juengel, Ansgar¹  Pinnau, Rene²  Roehrig, Elisa² 

[1] Vienna Univ Technol, Inst Anal & Sci Comp, A-1040 Vienna, Austria

[2] Tech Univ Kaiserlautern, Fachbereich Math, D-67663 Kaiserslautern, Germany

关键词: MOS diode;    Energy-transport model;    Electron temperature;    Lattice temperature;    Existence of weak solutions;    Asymptotic analysis;    Numerics;    Device characteristics;   

DOI  :  10.1016/j.jmaa.2010.12.023

来源: Elsevier

【 摘 要 】

A simplified bipolar energy-transport model, for a metal-oxide-semiconductor diode (MOS) with nonconstant lattice temperature is considered. The electron and hole current densities vanish in the diode but the particle temperature may be large. The existence of weak solutions to the system of quasilinear elliptic equations with nonlinear boundary conditions is proved using a Stampacchia trunction technique and maximum principle arguments. Further, an asymptotic analysis for the one-dimensional MOS diode is presented, which shows that only the boundary temperature influences the capacitance-voltage characteristics of the device. The analytical results are underlined by numerical experiments. (C) 2010 Elsevier Inc. All rights reserved.

【 授权许可】

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