Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type

International Research and Innovation Summit 2017

Hashim, Yasir^1

Faculty of Engineering Technology, University Malaysia Pahang (UMP), Lebuhraya Tun Razak, Pahang

26300, Malaysia^1

关键词: MOS diode;    Semiconductor-type;    Temperature characteristic;    Temperature nano sensors;    Working temperatures;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/226/1/012123/pdf
DOI  :  10.1088/1757-899X/226/1/012123

来源: IOP

【 摘 要 】

This paper represents the temperature effect on FinFET transistor and the possibility of using it as a temperature nano-sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the FinFET. Current-voltage characteristics with different values of temperature were simulated. MOS diode connection suggested using the FinFET transistor as a temperature nano-sensor. The final results shows that the best FinFET used as a nano- sensor is with GaAs because it has the greatest Δα (=10.9%) referring to Δα at 25°C, and the best FinFET stable with increasing working temperature is Si-FinFET because it has the lowest Δα (=6%) referring to Δα at 25°C.