Passivation Mechanisms of Atomic Layer-deposited AlOx Films and AlOx/SiOx Stack

5th Annual International Workshop on Materials Science and Engineering

Gong, Lei^1^2 ; Zhou, Chunlan^1^2 ; Zhu, Junjie^3 ; Wang, Wenjing^1^2 ; Ji, Fangxu^1^2

Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Science (CAS), Beijing

100190, China^1

University of Chinese Academy of Sciences (UCAS), Beijing

100190, China^2

Solar Energy Department, Institute for Energy Technology, Kjeller, Norway^3

关键词: Atomic layer deposited;    Chemical passivation;    Corona charge method;    Passivation effect;    Passivation layer;    Perhydropolysilazane;    Silicon surfaces;    Time of flight secondary ion mass spectrometry;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/585/1/012026/pdf
DOI  :  10.1088/1757-899X/585/1/012026

来源: IOP

【 摘 要 】

A new passivation layer of AlOx/SiOx were prepared, in which 80 nm SiOx was prepared by spin-coating perhydropolysilazane (PHPS) and annealed at 450°C. In order to compare the passivation effect of single AlOx layers and the SiOx/AlOx stack on silicon surface, the fixed charge (Qf) in the passivated layers and chemical passivation effect were obtained by corona charge method. Fourier transform infrared spectroscopy (FTIR) and Time-of-flight secondary ion mass spectrometry (TOF-SIMS) was used to investigate the Si-H, Si-O bonds and the hydrogen profile in the passivation layer, respectively. The result reveals that the single layer of AlOx provides good field effect with a large amount of negative Qf. Furthermore, SiOx capping on AlOx have more excellent chemical passivation because of amount of H saturate the dangling bonds on the silicon surface.