Direct atomic layer deposited Gd2O3 on grapheme and effects of rapid thermal annealing on its property

2nd International Conference on New Material and Chemical Industry

材料科学;化学工业

Zheng, L.^1,2 ; Zhang, D.L.^1,2 ; Cheng, X.H.^1 ; Shen, L.Y.^1 ; Wang, Q.^1,2 ; Zhou, W.^1,2 ; Wu, D.P.^1,2 ; Yu, Y.H.^1

State Key Laboratory of Functional Materials for Informatics, SIMIT, Chinese Academy of Sciences, Changning Road 865, Shanghai

200050, China^1

University of Chinese Academy of Sciences, Beijing

100049, China^2

关键词: Atomic layer deposited;    Dielectrics growth;    Inert properties;    Micro-electronic devices;    Optical and electrical properties;    Optimal methods;    Rapid thermal annealing (RTA);    Relative permittivity;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/292/1/012023/pdf
DOI  :  10.1088/1757-899X/292/1/012023

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Atomic layer deposition (ALD) has been accepted as one of the optimal methods for dielectrics growth but it is challenging for ALD to deposit dielectrics on graphene due to its chemically inert property. In this work, Gd2O3films were grown on graphene directly by atomic layer deposition with assistant of pre-H2O water treatment. In addition, we investigated the effects of rapid thermal annealing (RTA) on microstructure, optical and electrical properties of Gd2O3films on graphene. Raman spectroscopy showed no defects were introduced into graphene during the ALD or RTA processes. The adhesion of Gd2O3films on graphene was enhanced and the crystalline of Gd2O3was improved. In addition, the relative permittivity of Gd2O3on graphene is 14.5 and its EOT can be down to 5.4 nm. This technique may expand the application of graphene in microelectronic devices.