Enhanced photoluminescence efficiency in AlGaN quantum wells with gradient-composition AlGaN barriers

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Shevchenko, E.A.^1 ; Nechaev, D.V.^1 ; Jmerik, V.N.^1 ; Kaibyshev, V. Kh^1 ; Ivanov, S.V.^1 ; Toropov, A.A.^1

Ioffe Institute RAS, Saint Petersburg

194021, Russia^1

关键词: AlGaN quantum wells;    Barrier layers;    Exciton-binding energy;    Internal quantum efficiency;    Optimized designs;    Photoluminescence efficiency;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012118/pdf
DOI  :  10.1088/1742-6596/741/1/012118

来源: IOP

【 摘 要 】

We present photoluminescence studies of AIxGa1-xN/AlyGa1-yN (y = x+0.3) quantum well (QW) heterostructures with graded AI content in barrier layers, emitting in the range 285-315 nm. The best-established internal quantum efficiency of the QW emission is as high as 81% at 300 K, owing to enhanced activation energy of charge carriers and exciton binding energy in the QW heterostructure with optimized design.