The binding energy of excitons in narrow quantum wells

18th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Belov, P.A.^1 ; Khramtsov, E.S.^2

Department of Computational Physics, St. Petersburg State University, Ulyanovskaya 1, St. Petersburg

198504, Russia^1

Spin Optics Laboratory, St. Petersburg State University, Ulyanovskaya 1, St. Petersburg

198504, Russia^2

关键词: Dinger equation;    Exciton-binding energy;    Ground-state energies;    Material parameter;    Narrow quantum wells;    Non parabolicity;    Numerical scheme;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/816/1/012018/pdf
DOI  :  10.1088/1742-6596/816/1/012018

来源: IOP

【 摘 要 】

The effects of discontinuities of the material parameters at the interfaces of narrow GaAs-based quantum wells as well as of the nonparabolicity of the conduction band on the exciton binding energy are studied. These effects are taken into account in the three-dimensional Schrö dinger equation for the exciton. Accurate exciton ground state energies are obtained using the improved numerical scheme of Khramtsov et al. (2016 J. Appl. Phys. 119 184301). The enhancement of the exciton binding energy for narrow quantum wells is observed and the contribution of each effect is estimated.