GaP/Si anisotype heterojunction solar cells

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Zelentsov, K.S.^1 ; Gudovskikh, A.S.^1,2

St. Petersburg Academic University, St. Petersburg

194021, Russia^1

St. Petersburg Electrotechnical University LETI, St.-Petersburg

197376, Russia^2

关键词: Hetero interfaces;    Heterojunction solar cells;    Interface states density;    N- and p-type doping;    Optimal thickness;    Silicon substrates;    Surface recombinations;    Valence band offsets;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012096/pdf
DOI  :  10.1088/1742-6596/741/1/012096

来源: IOP

【 摘 要 】

Multijunction solar cells grown on Si substrates using III-V compounds are very promising due to potentially high efficiency (over 40%). In that case homojunction in silicon can be replaced with GaP heterojunctions which can be more effective in terms of lowering surface recombination. Silicon substrates of both n- and p-type doping were used to form GaP/Si anisotype heterostructures. It was demonstrated that for p-GaP/n-Si structures charge carrier transport is mainly blocked due to large value of valence band offset at the heterointerface. For n-GaP/p-Si solar cells optimal thickness and doping level were calculated using AFORS-HET software. The influence of interface states density and GaP layer parameters was investigated.