Influnce of exposure with Xe radiation on heterojunction solar cell a-SiC/c-Si studied by impedance spectroscopy

Applied Nanotechnology and Nanoscience International Conference 2016

Perný, M.^1 ; Šály, V.^1 ; Packa, J.^1 ; Mikoláek, M.^1 ; Váry, M.^1 ; Huran, J.^2 ; Hrubín, L.^2,3 ; Skuratov, V.A.^3 ; Arbet, J.^2

Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkoviova 3, Bratislava

81219, Slovakia^1

Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava

84104, Slovakia^2

Joint Institute for Nuclear Research, Joliot-Curie 6, Moscow Region, Dubna

141980, Russia^3

关键词: Crystalline silicons;    Crystalline solar cells;    Heterojunction solar cells;    Impedance spectroscopy;    Photo-voltaic efficiency;    Silicon structures;    Technological parameters;    Transport phenomena;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/829/1/012016/pdf
DOI  :  10.1088/1742-6596/829/1/012016

来源: IOP

【 摘 要 】

The photovoltaic efficiency of heterostructures a-SiC/c-Si may be the same or even better in comparison with conventional silicon structures when suitable adjustment of technological parameters is realized. The main advantage of heterojunction formed amorphous SiC thin film and crystalline silicon compared to standard crystalline solar cell lies in high build-in voltage and thus a high open-circuit voltage. Solar cells can be exposed to various influences of hard environment. A deterioration of properties of heterostructures (a-SiC/c-Si) due to irradiation is examined in our paper using impedance spectroscopy method. Xe ions induced damage is reflected in changes of proposed AC equivalent circuit elements. AC equivalent circuit was proposed and verified using numerical simulations. Impedance spectra were also measured at different DC bias voltages due to a more detailed understanding correlation between Xe ions induced damage and transport phenomenon in the heterostructure.