Inter-valley mixing in Si/SiO2 heterostructures

15th Russian Youth Conference on Physics and Astronomy

物理学;天文学

Glinskii, G.F.^1 ; Mironova, M.S.^1

Department of Micro- and Nanoelectronics, St. Petersburg State Electrotechnical University, 5 Professora Popova Street, St.-Petersburg 197376, Russia^1

关键词: Effective Hamiltonian;    Electron wave functions;    Envelope functions;    Hetero interfaces;    Si/SiO2;    Square quantum wells;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/461/1/012040/pdf
DOI  :  10.1088/1742-6596/461/1/012040

学科分类：天文学(综合)

来源: IOP

【 摘 要 】

We present a theory for heterostructures based on diamond structured semiconductors, with an emphasis of calculating inter-valley coupling. The theory allows taking into account microscopic symmetry of heterointerface within the envelope-function approach. To find out corrections to the effective Hamiltonian we use methods of group theory. We calculated valley-orbit splitting and electron wave functions for SiO2/Si/SiO2finite square quantum wells. The results are in good agreement with those obtained by other authors.