The change in optical and electrical characteristics of tin oxide films under the action of argon ion beam

7th Conference on Low temperature Plasma in the Processes of Functional Coating Preparation

Asainov, O.^1 ; Umnov, S.^1 ; Temenkov, V.^1

Physical Technical Institute, Tomsk Polytechnic University, Lenina 2, Tomsk

634050, Russia^1

关键词: Argon ion;    Argon ion beam;    Electrical characteristic;    Glass substrates;    Irradiation time;    Optical and electrical properties;    Oxygen partial pressure;    Reactive magnetron sputtering;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/669/1/012059/pdf
DOI  :  10.1088/1742-6596/669/1/012059

来源: IOP

【 摘 要 】

Thin films of tin oxide (TO) were deposited on the glass substrates at room temperature using reactive magnetron sputtering at various oxygen partial pressures. After the deposition the filmswere irradiated with argon ions beam. The change of the optical and electrical properties of the films depending on the irradiation time was studied. Films optical properties in the range of 300-1100 nm were investigated by photometry as well as their structural properties were studied using X-ray diffraction. Diffractometric research showed that the films, deposited on a substrate, have a crystal structure, and after argon ions irradiation they become quasi-crystalline (amorphous). It was found that the transmission increases proportionally with the irradiation time, but the surface resistance -disproportionally.