Determination of the Diamagnetic and Paramagnetic Impurity Magnetic Susceptibility in Ge:As near the Metal Insulator phase Transition

17th Russian Youth Conference on Physics and Astronomy

物理学;天文学

Semenikhin, P.V.^1 ; Veinger, A.I.^1 ; Zabrodskii, A.G.^1 ; Makarova, T.L.^2 ; Tisnek, T.V.^1 ; Goloshchapov, S.I.^1

Ioffe Institute, St. Petersburg

194021, Russia^1

Lappeenranta University of Technology, Lappeenranta

53850, Finland^2

关键词: Diamagnetic susceptibility;    Donor electrons;    ESR spectroscopy;    Low temperatures;    Metal-insulator phase transition;    Paramagnetic components;    Paramagnetic impurity;    SQUID magnetometry;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/661/1/012023/pdf
DOI  :  10.1088/1742-6596/661/1/012023

学科分类：天文学(综合)

来源: IOP

【 摘 要 】

Low-temperature magnetic susceptibility of heavily doped Ge: As samples has been investigated by methods SQUID magnetometry and ESR spectroscopy near the metal-insulator phase transition. Paramagnetic component of the impurity magnetic susceptibility was investigated by ESR previously. Using both techniques make possible to determined the diamagnetic component of impurity susceptibility. The value of the impurity diamagnetic susceptibility equals to 5×10-8cm3/g and corresponds to the localization radius of the As donor- electron near the metal-insulator phase transition.