GaN nanowires growth with record growth rate using Ti thin film

16th Russian Youth Conference on Physics and Astronomy

物理学;天文学

Rozhavskaya, M.M.^1 ; Troshkov, S.I.^1 ; Lundina, E.Yu.^1 ; Smirnov, A.N.^1 ; Davydov, V.Yu.^1 ; Lundin, W.V.^1

Ioffe Physical Technical Institute, Politchnicheskaya 26, Saint-Petersburg, Russia^1

关键词: GaN nanowires;    Hexagonal shapes;    Low temperatures;    Metal organic;    Micro photoluminescence;    Single nanowires;    Spectral line;    Titanium film;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/572/1/012030/pdf
DOI  :  10.1088/1742-6596/572/1/012030

学科分类：天文学(综合)

来源: IOP

【 摘 要 】

In this paper we present a new technological approach for GaN nanowires synthesis using metal-organic chemical vapor deposition. This aproach is to use thin titanium film, which promote nanowires seeds formation. Such an approach allows to synthesis nanowires with diametr in the range of 30 nm- 3 mkm, strongly oriented along saphire c axis and with regular hexagonal shape. A good quality of the nanowires material is confirmed by low temperature micro-photoluminescence spectrum of single nanowire, where spectral lines, corresponded to free and bound excitons, are observed.