International Conference on Innovation in Engineering and Vocational Education | |
Growth mechanism of Co:TiO2 thin film deposited by metal organic chemical vapor deposition technique | |
自然科学;教育 | |
Saripudin, A.^1 ; Arifin, P.^2 | |
Study Program of Electrical Engineering, Dept. of Electrical Engineering Education, Faculty of Technology and Vocational, Universitas Pendidikan Indonesia, Jl. Dr. Setiabudi 207, Bandung, West Java | |
40154, Indonesia^1 | |
Physics of Electronics Material Lab., Study Program of Physics, Faculty of Mathematics and Natural Science, Institut Teknologi Bandung, Jl. Ganeca 10, Bandung, West Java | |
40132, Indonesia^2 | |
关键词: Co:TiO2 thin films; Cobalt-doped titanium dioxide; Decomposition rate; Growth mechanisms; Metal organic; N type silicon; Surface chemical reactions; | |
Others : https://iopscience.iop.org/article/10.1088/1757-899X/128/1/012046/pdf DOI : 10.1088/1757-899X/128/1/012046 |
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来源: IOP | |
【 摘 要 】
In this research, we investigated the growth mechanism of cobalt-doped titanium dioxide (Co:TiO2) films. Thi Co:TiO2thin films were grown on the n-type silicon substrate. The films were grown by metal organic chemical vapor deposition method. The growth temperature was varied of 325°C - 450°C. The films were characterized by SEM. Using Arheniu's equation, it is known that the activation energy value of film growth is positive in the range of temperature of 325°C - 400°C and negative in the range of temperature of 400°C - 450°C. These results show that the decomposition rate in the range of temperature of 325°C - 400°C is due to diffusion phase of precursor gas. On the other hand, the decomposition rate decreased in the range of temperature of 400°C - 450°C because the precursor gas decreased, and the surface chemical reaction was high.
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