Growth mechanism of Co:TiO2 thin film deposited by metal organic chemical vapor deposition technique

International Conference on Innovation in Engineering and Vocational Education

自然科学;教育

Saripudin, A.^1 ; Arifin, P.^2

Study Program of Electrical Engineering, Dept. of Electrical Engineering Education, Faculty of Technology and Vocational, Universitas Pendidikan Indonesia, Jl. Dr. Setiabudi 207, Bandung, West Java

40154, Indonesia^1

Physics of Electronics Material Lab., Study Program of Physics, Faculty of Mathematics and Natural Science, Institut Teknologi Bandung, Jl. Ganeca 10, Bandung, West Java

40132, Indonesia^2

关键词: Co:TiO2 thin films;    Cobalt-doped titanium dioxide;    Decomposition rate;    Growth mechanisms;    Metal organic;    N type silicon;    Surface chemical reactions;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/128/1/012046/pdf
DOI  :  10.1088/1757-899X/128/1/012046

来源: IOP

【 摘 要 】

In this research, we investigated the growth mechanism of cobalt-doped titanium dioxide (Co:TiO2) films. Thi Co:TiO2thin films were grown on the n-type silicon substrate. The films were grown by metal organic chemical vapor deposition method. The growth temperature was varied of 325°C - 450°C. The films were characterized by SEM. Using Arheniu's equation, it is known that the activation energy value of film growth is positive in the range of temperature of 325°C - 400°C and negative in the range of temperature of 400°C - 450°C. These results show that the decomposition rate in the range of temperature of 325°C - 400°C is due to diffusion phase of precursor gas. On the other hand, the decomposition rate decreased in the range of temperature of 400°C - 450°C because the precursor gas decreased, and the surface chemical reaction was high.