Growth Mechanism of Continuous Monolayer MoS2 Prepared by Chemical Vapor Deposition

7th Annual International Conference on Materials Science and Engineering

Wang, Wenzhao^1 ; Zeng, Xiangbin^1 ; Guo, Zhenyu^1 ; Ding, Jia^1 ; Chen, Xiaoxiao^1

School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan

430074, China^1

关键词: Ambient pressure chemical vapor depositions;    Device application;    Growth mechanisms;    Molybdenum disulfide;    Optoelectronics devices;    Photoluminescence spectrum;    SEM observation;    Two-dimensional semiconductors;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/562/1/012074/pdf
DOI  :  10.1088/1757-899X/562/1/012074

来源: IOP

【 摘 要 】

Molybdenum disulfide (MoS2) is a cutting-edge layer-dependent two dimensional semiconductor which monolayer is direct-bandgap. Nano-scale monolayer MoS2 has big potential in electronics and optoelectronics devices. In this work we reported the progress in growing continuous single layer MoS2 by ambient pressure chemical vapor deposition (APCVD). Scanning electron microscope (SEM), Raman, photoluminescence spectra (PL) and atomic force microscopy (AFM) disclose that as-grown films are large-area monolayer and of high quality. SEM observations also clearly reveal the growth process of these films. Figuring out the growth mechanism grants growth of large scale continuous MoS2, and lays the foundation for wide device applications in the future.