THz intervalence band antipolaritons

4th Workshop on Theory, Modelling and Computational Methods for Semiconductors

物理学;计算机科学

Faragai, Inuwa A.^1 ; Pereira, Mauro F.^1

Materials and Engineering Research Institute, Sheffield Hallam University, S1 1WB, Sheffield, United Kingdom^1

关键词: Device application;    Different structure;    Energy dispersions;    Excitation conditions;    Fundamental studies;    Nonlinear dielectric constants;    Optical susceptibility;    Scattering process;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/526/1/012006/pdf
DOI  :  10.1088/1742-6596/526/1/012006

学科分类：计算机科学（综合）

来源: IOP

【 摘 要 】

THz polaritons and antipolaritons have strong potential for device applications and are a challenging field of fundamental studies. In this paper, we start from a numerically exact nonequilibrium many body solutions and adjust it to a simplified nonlinear dielectric constant approach to the optical susceptibility. The resulting expression is inserted in the wave equation to describe the coupling of TE-polarized THz radiation with an intervalence band transition in GaAs/Al0.3Ga0.7As multiple quantum wells embedded in microcavities. The energy dispersions relations leading to THz polaritons are investigated. Here we focus on the impact of dephasing and scattering processes for different structures and excitation conditions in an inverted medium leading to antipolaritons.