Examination of Photoluminescence Temperature Dependencies in N-B Co-doped 6H-SiC

EMRS 2013 Spring Meeting, Symposium G: Alternative approaches of SiC and related wide bandgap materials in light emitting and solar cell applications

Gavryushin, V.^1 ; Gulbinas, K.^1 ; Grivickas, V.^1 ; Karalinas, M.^1 ; Stasipnas, M.^1 ; Jokubaviius, V.^2 ; Sun, J.W.^2 ; Syväjärvi, M.^2

Institute of Applied Research, Vilnius University, Sauletekio av. 10, LT-10223 Vilnius, Lithuania^1

Department of Physics, Chemistry and Biology, Linköping University, Linköping, SE-58183, Sweden^2

关键词: Co-doped;    De-trapping;    Excitation conditions;    Half-width;    Low temperatures;    Low-energy band;    Photoluminescence temperature;    SiC epilayers;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/56/1/012003/pdf
DOI  :  10.1088/1757-899X/56/1/012003

来源: IOP

【 摘 要 】

Two overlapping photoluminescent (PL) bands with a peaks (half-width) at 1.95 eV (0.45 eV) and 2.15 eV (0.25 eV), correspondingly at 300 K, are observed in heavily B-N co-doped 6H-SiC epilayers under high-level excitation condition. The low energy band dominates at low temperatures and decreases towards 300 K which is assigned to DAP emission from the nitrogen trap to the deep boron (dB) with phonon-assistance. The 2.15 eV band slightly increases with temperature and becomes comparable with the former one at 300 K. We present a modelling comprising electron de-trapping from the N-trap, i.e. calculating trapping and de-trapping probabilities. The T-dependence of the 2.15 eV band can be explained by free electron emission from the conduction band into the dB center provided by similar phonon-assistance.