Defect formation in 4H-SiC single crystal grown on the prismatic seeds

16th Russian Youth Conference on Physics and Astronomy

物理学;天文学

Fadeev, A.Yu.^1 ; Lebedev, A.O.^1 ; Tairov, Yu.M.^1

Micro- and Nanoelectronics Department, St. Petersburg Electrotechnical University, Prof. Popova str. 5, St. Petersburg

197376, Russia^1

关键词: 4H silicon carbide;    Basal plane dislocations;    Defect formation;    Seed orientation;    SiC single crystals;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/572/1/012018/pdf
DOI  :  10.1088/1742-6596/572/1/012018

学科分类：天文学(综合)

来源: IOP

【 摘 要 】

The defect structure of 4H silicon carbide single crystals grown by PVT method on three prismatic seeds (10-10), (11-20) and (8.3.-11.0) is considered. The only defects existing in the grown ingots are stacking faults and basal plane dislocations. The type of stacking fault is studied. The dependence of stacking fault morphology on the seed orientation is analyzed.