Formation of dislocation loops and voids in electron irradiated zinc selenide single crystals

20th International Scientific Conference Reshetnev Readings-2016

Loginov, Y.Y.^1 ; Brown, P.D.^2 ; Kovalev, I.V.^1

Reshetnev Siberian State University of Science and Technology, 31 Krasnoyarskiy Rabochiy av., Krasnoyarsk

660037, Russia^1

University of Nottingham, Nottingham

NG7 2RD, United Kingdom^2

关键词: Defect formation;    Defect formation energies;    Dislocation loop;    Fine particles;    Fringe contrasts;    Structural defect;    Threshold energy;    Zinc selenide single crystals;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/255/1/012014/pdf
DOI  :  10.1088/1757-899X/255/1/012014

来源: IOP

【 摘 要 】

The formation of small dislocation loops in size of 2.5 - 45 nm and a density of 1.4•1011cm-2, as well as voids in size ≤10 nm in ZnS crystals were found by the transmission electron microscopy method (TEM). Samples were examined and irradiated in situ in a JEOL 4000EX-II electron microscope operated at energy of 400 keV and intensity of (1 - 4)•1019e/cm2•s. Fine particles of a new phase in size ≤10 nm are formed also. These features can be identified from an analysis of moiré fringe contrast as phase of ZnO2. Similar defects in single crystals of ZnS formed in situ after irradiation in a transmission electron microscope JEM-100CX operated at energy of 100 keV and intensity of 3,5•1017e/cm2•s. It was found that the formation of structural defects in ZnS under electron irradiation with above-threshold energy of defect formation (400 keV) is similar to the formation of structural defects in these crystals under electron irradiation with sub-threshold defect formation energy (100 keV).