Hall Mobility Maps for 4H-Silicon Carbide by Monte Carlo Simulations

Microtechnology and Thermal Problems in Electronics

物理学;无线电电子学

Woz´ny, J.^1 ; Lisik, Z.^1 ; Podgórski, J.^1

Lodz University of Technology, Department of Semiconductor and Optoelectronic Devices, Wolczanska 211/215, 90-924 Lodz, Poland^1

关键词: 4H silicon carbide;    Donor concentrations;    Electron transport;    Hall factor;    Numerical approaches;    Single particle;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/494/1/012005/pdf
DOI  :  10.1088/1742-6596/494/1/012005

来源: IOP

【 摘 要 】

The Monte Carlo Single Particle approach was used to analyze electron transport in 4H-SiC taking into account the influence of the magnetic field. Within the numerical approach it was possible to evaluate electron Hall mobility and the Hall factor for the wide range of donor concentrations and temperatures varying from 300 K up to 700 K.