Two dimensional Si layer epitaxied on LaAlO3(111) substrate: RHEED and XPS investigations

3rd International Meeting on Silicene

Azzouz, C Ben^1 ; Akremi, A.^1 ; Derivaz, M.^2 ; Bischoff, J.L.^2 ; Zanouni, M.^2,3 ; Dentel, Didier^2

Université de Carthage, Laboratoire de Physique des Matériaux, Faculté des Sciences de Bizerte, 7021 Jarzouna Bizerte, Tunisia^1

Institut de Science des Matériaux de Mulhouse (IS2M), UMR 7361 CNRS-UHA, Université de Haute Alsace, 3bis rue Alfred Werner, 68093 Mulhouse, France^2

Equipe de Recherche en Mécanique, Matériaux et Métallurgie, Université Abdelmalek Essaâdi, FST, ancienne route de l'aéroport, km 10, ziaten BP 416, 90050, Tangier, Morocco^3

关键词: Crystalline oxides;    Si layer;    Single layer;    Temperature range;    Two dimensional (2D) structure;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/491/1/012003/pdf
DOI  :  10.1088/1742-6596/491/1/012003

来源: IOP

【 摘 要 】

We report the epitaxial growth of one Silicon monolayer on the LaAlO3(111) substrate, a high-κ crystalline oxide. Structural and chemical properties were investigated in-situ using reflection high energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS). The deposition was achieved by molecular beam epitaxy in the temperature range RT-500°C. A two-dimensional epitaxial growth mode is observed for a deposition at temperature between 300°C and 500°C. The deposited single layer is formed by two dimensional (2D) structures of Si.