UV LEDs for high-current operation

15th Russian Youth Conference on Physics and Astronomy

物理学;天文学

Kurin, S.Yu.^1 ; Antipov, A.A.^1 ; Roenkov, A.D.^1 ; Barash, I.S.^1 ; Helava, H.I.^1,2 ; Menkovich, E.A.^3 ; Tarasov, S.A.^3 ; Lamkin, I.A.^3 ; Shmidt, N.M.^4 ; Makarov, Yu.N.^1,2

GaN-Crystals Ltd., 27 Engels Ave, St.-Petersburg 194156, Russia^1

Nitride Crystals Inc., 181 E Industry Court, Deer Park, NY 11729, United States^2

Saint-Petersburg Electrotechnical University LETI, Prof. Popova 5, St.-Petersburg 197376, Russia^3

Ioffe Physical Technical Institute of RAS, Polytekhnicheskaya 26, St.-Petersburg 194021, Russia^4

关键词: Gan/algan;    High currents;    Hydride vapour phase epitaxies;    Operating currents;    Performance capability;    Ultraviolet light emitting diodes;    UV LEDs;    Wallplug efficiency;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/461/1/012028/pdf
DOI  :  10.1088/1742-6596/461/1/012028

学科分类：天文学(综合)

来源: IOP

【 摘 要 】

In this paper we report on results of development of ultraviolet light-emitting diodes (UV LEDs) based on GaN/AlGaN heterostructures grown on Al2O3(0001) substrates by chloride-hydride vapour phase epitaxy (CHVPE). Both UV LED heterostructures and packaged dies are investigated. UV LEDs proved performance capability at current density up to 125 A/cm2and revealed wall-plug efficiency (WPE) of 1.5% at operating current of 20 mA.