Optical transmission of strained GaN/sapphire structures

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Kurin, S. Yu^1 ; Puzyk, M.V.^2,3 ; Ermakov, I.A.^2 ; Antipov, A.A.^1 ; Barash, I.S.^1 ; Roenkov, A.D.^1 ; Ratnikov, V.V.^4 ; Usikov, A.S.^2,5 ; Papchenko, B.P.^2 ; Helava, H.^5 ; Makarov, Yu N.^1,5 ; Chernyakov, A.E.^6

Nitride Crystals Group Ltd., pr. Engel'sa 27, St. Petersburg

194156, Russia^1

University ITMO, Kronverkskiy pr. 49, St. Petersburg

197101, Russia^2

Herzen University, Nab. r. Moyki 48, St. Petersburg

194186, Russia^3

Ioffe Physical Technical Institute, Polytekhnicheskaya 26, St. Petersburg

194021, Russia^4

Nitride Crystals Inc., 181 E Industry Court, Deer Park

NY

11729, United States^5

Submicron Heterostructures for Microelectronics Research and Engineering Center, RAS, 26 Polytekhnicheskaya Str., St. Petersburg

194021, Russia^6

关键词: Cutoff wavelengths;    Growth conditions;    Hydride vapour phase epitaxies;    Sapphire substrates;    Shorter wavelength;    Transmission curve;    Transmission spectrums;    Wavelength ranges;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012048/pdf
DOI  :  10.1088/1742-6596/741/1/012048

来源: IOP

【 摘 要 】

In this work we correlated transmission spectra of GaN layers grown on sapphire substrates by hydride vapour phase epitaxy with biaxial stress measured in the layers. It was observed that the sign of stress in the GaN layer is changed by Si doping and growth conditions. Transmission curves are shifted relative to each other depending on the stress in the layer. The cut-off wavelength of the transmission curves has a tendency to shift near parallel to a shorter wavelength range when the GaN layer is under the compression biaxial stress. When the GaN layer is under the tensile biaxial stress the cut off wavelength has a tendency to shift near parallel to a longer wavelength range).