The efficiency of UV LEDs based on GaN/AlGaN heterostructures

17th Russian Youth Conference on Physics and Astronomy

物理学;天文学

Evseenkov, A.S.^1 ; Tarasov, S.A.^1 ; Kurin, S.Yu.^2 ; Usikov, A.S.^3,4 ; Papchenko, B.P.^3 ; Helava, H.^4 ; Makarov, Yu.N.^2,4 ; Solomonov, A.V.^1

Saint-Petersburg Electrotechnical University LETT, 5 Prof. Popov Str., St. Petersburg

197376, Russia^1

Nitride Crystals Group Ltd., pr. Engel'sa 27, St. Petersburg

194156, Russia^2

University ITMO, Kronverkskiy pr. 49, St. Petersburg

197101, Russia^3

Nitride Crystals Inc., 181 E Industry Court, Deer Park

NY

11729, United States^4

关键词: Active regions;    Epitaxial structure;    Gan/algan;    Operating currents;    Optical power;    Peak wavelength;    Structural perfection;    UV LEDs;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/661/1/012038/pdf
DOI  :  10.1088/1742-6596/661/1/012038

学科分类：天文学(综合)

来源: IOP

【 摘 要 】

The UV LED GaN/AlGaN heterostructures obtained by HVPE approach were investigated. It was shown that the peak wavelength of UV LEDs was in the range of 360-380 nm with FWHM of 10-13 nm. At operating current of 20 mA, the active region temperature Tj was 43°C, the output optical power and efficiency - 1.14 mW and 1.46%, respectively. It was shown that the use of HVPE method allowed to achieve a high degree of structural perfection of epitaxial structures.