Local mechanical stress relaxation of Gunn diodes irradiated by protons

5th International Congress on Energy Fluxes and Radiation Effects 2016

Gradoboev, A.V.^1 ; Tesleva, E.P.^1

National Research Tomsk Polytechnic University, 30 Lenin Ave., Tomsk

634050, Russia^1

关键词: Absorbed dose;    Active Layer;    Mechanical stress;    Operating currents;    Production efficiency;    Radiation resistance;    Thermo compression bonding;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/830/1/012133/pdf
DOI  :  10.1088/1742-6596/830/1/012133

来源: IOP

【 摘 要 】

The aim of the work is studying the impact of Gunn diodes thermocompression bonding conditions upon their resistance to being radiated with protons of various energies. It was established that the tough conditions of Gunn diodes thermocompression bonding results in local mechanic stresses introduced into the active layer of the device, reduction of electron mobility because of the faults introduction and, subsequently, to reduction of operating current, power of UHF generation, percentage of qualitative units production and general reduction of production efficiency of the devices with required characteristics. Irradiation of Gunn diodes produced under the tough conditions of thermocompression bonding with protons which energy is (40-60) MeV with an absorbed dose of (1-6)•102Gy does not practically reduce the radiation resistance of Gunn diodes produced with application of the given technique. This technique can be recommended for all semiconductor devices on the base of GaAs, which parameters depend significantly upon the mobility of the electrons, to increase the efficiency of production.