Optimization of growth parameters of TiO2 thin films using a slow positron beam

16th International Conference on Positron Annihilation

Butterling, M.^1 ; Anwand, W.^1 ; Cornelius, S.^1 ; Potzger, K.^1 ; Smekhova, A.^2 ; Vinnichenko, M.^1 ; Wagner, A.^1

Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, D-01328 Dresden, Germany^1

M.V.Lomonosov Moscow State University (MSU), Leninskie Gory 1, Moscow, 119991, Russia^2

关键词: Doppler broadening spectroscopy;    Film deposition;    Growth parameters;    Helmholtz;    Oxygen flow;    Sensitive parameter;    Slow positron beam;    TiO2 thin films;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/443/1/012073/pdf
DOI  :  10.1088/1742-6596/443/1/012073

来源: IOP

【 摘 要 】

TiO2thin films grown on fused silica were investigated using positron Doppler broadening spectroscopy at the slow-positron-beam SPONSOR [1] at the Helmholtz-Zentrum Dresden-Rossendorf. Effects of changes in different parameters like temperature or oxygen flow during film deposition on positron sensitive parameters have been investigated and first results will be presented.