会议论文详细信息
World Multidisciplinary Earth Sciences Symposium 2016 | |
Low Temperature Oxidation of GaAs by UV Stimulated Plasma Anodizing | |
Bibilashvili, Amiran^1 ; Kushitashvili, Zurab^1 | |
Ivane Javakhishvili Tbilisi State University, LEPL Institute of Micro and Nanoelectronics, Chavchavadze ave.13, Tbilisi | |
0179, Georgia^1 | |
关键词: Auger spectroscopy; C-V characteristic; Distribution profiles; Low temperature technology; Low-temperature oxidation; Plasma anodizing; State densities; Ultraviolet irradiations; | |
Others : https://iopscience.iop.org/article/10.1088/1755-1315/44/3/032002/pdf DOI : 10.1088/1755-1315/44/3/032002 |
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来源: IOP | |
【 摘 要 】
In this paper we offer low temperature technology receiving GaAs oxide. For this purpose, we use plasma anodizing with ultraviolet irradiation. Formation native oxide of GaAs is a problem and solving this problem is a scientific challenge. This paper provides the information about the kinetic of growing GaAs oxide, measurement of C-V characteristic, analysis of XPS spectra and Auger Spectroscopy, the distribution profiles of oxygen, Gallium and Arsenide in the total oxide, surface roughness and state density dependence on the anodizing current.
【 预 览 】
Files | Size | Format | View |
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Low Temperature Oxidation of GaAs by UV Stimulated Plasma Anodizing | 1253KB | download |