Low Temperature Oxidation of GaAs by UV Stimulated Plasma Anodizing

World Multidisciplinary Earth Sciences Symposium 2016

Bibilashvili, Amiran^1 ; Kushitashvili, Zurab^1

Ivane Javakhishvili Tbilisi State University, LEPL Institute of Micro and Nanoelectronics, Chavchavadze ave.13, Tbilisi

0179, Georgia^1

关键词: Auger spectroscopy;    C-V characteristic;    Distribution profiles;    Low temperature technology;    Low-temperature oxidation;    Plasma anodizing;    State densities;    Ultraviolet irradiations;   

Others  :  https://iopscience.iop.org/article/10.1088/1755-1315/44/3/032002/pdf
DOI  :  10.1088/1755-1315/44/3/032002

来源: IOP

【 摘 要 】

In this paper we offer low temperature technology receiving GaAs oxide. For this purpose, we use plasma anodizing with ultraviolet irradiation. Formation native oxide of GaAs is a problem and solving this problem is a scientific challenge. This paper provides the information about the kinetic of growing GaAs oxide, measurement of C-V characteristic, analysis of XPS spectra and Auger Spectroscopy, the distribution profiles of oxygen, Gallium and Arsenide in the total oxide, surface roughness and state density dependence on the anodizing current.