Capacitance-voltage and Auger chemical profile studies on AlGaN/GaN structures passivated by SiO2/Si3N4 and SiNx/Si3N4 bilayers

Optica Applicata

Andrzej Klimasek¹  Janusz Zywicki¹  Marcin Miczek¹  Boguslawa Adamowicz¹  Tamotsu Hashizume¹  Piotr Bobek¹ 

关键词: gallium nitride;    HEMT;    insulated gate;    passivation;    C-V;    Auger spectroscopy;    chemical in-depth profiles;   

DOI  :  

学科分类：光谱学

来源: Politechnika Wroclawska * Oficyna Wydawnicza / Wroclaw University of Technology

【 授权许可】

Unknown