Ultimate design and testing TPTS-based control systems with using full-scaled physical models of nuclear power plants

2nd International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

Zhukov, I.M.^1 ; Tolokonsky, A.O.^1

National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoe shosse 31, Moscow

115409, Russia^1

关键词: Collector currents;    Emitter-base voltages;    Irradiation conditions;    Low temperatures;    Radiation degradation;    Radiation impacts;    Scaled physical model;    X ray irradiation;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/498/1/012044/pdf
DOI  :  10.1088/1757-899X/498/1/012044

来源: IOP

【 摘 要 】

Radiation degradation rate of base current in SiGe HBTs was experimentally investigated using X-ray irradiation source with Cu anode at room and low temperatures. The dependences of base and collector current on the emitter-base voltage of the transistors were measured during radiation impact and presented for different total dose levels and irradiation conditions.