Low temperature radiation response of SiGe HBTs

7th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2016;8th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2017

Bakerenkov, A.S.^1 ; Felitsyn, V.A.^1 ; Rodin, A.S.^1 ; Bursian, Yu D^1 ; Pershenkov, V.S.^1

National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoe shosse 31, Moscow

115409, Russia^1

关键词: Collector currents;    Emitter-base voltages;    Irradiation conditions;    Low temperatures;    Radiation degradation;    Radiation impacts;    Total dose;    X ray irradiation;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/475/1/012001/pdf
DOI  :  10.1088/1757-899X/475/1/012001

来源: IOP

【 摘 要 】

Radiation degradation rate of base current in SiGe HBTs was experimentally investigated using X-ray irradiation source with Cu anode at room and low temperatures. The dependences of base and collector current on the emitter-base voltage of the transistors were measured during radiation impact and presented for different total dose levels and irradiation conditions.