Influence of silicon donor doping on electron transport in quantum wells AlGaAs/InGaAs/GaAs at different temperatures

7th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2016;8th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2017

Safonov, D.A.^1 ; Vinichenko, A.N.^1 ; Kargin, N.I.^1 ; Vasil'Evskii, I.S.^1

NRNU MEPhI, 31 Kashirskoe shosse, Moscow, Russia^1

关键词: AlGaAs/InGaAs/GaAs;    Donor concentrations;    Electron concentration;    Electron sheet concentration;    Electron transport;    Shubnikov de-Haas oscillation;    Temperature dependence;    Temperature sensitivity;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/475/1/012034/pdf
DOI  :  10.1088/1757-899X/475/1/012034

来源: IOP

【 摘 要 】

Electron transport in single delta-Si doped pseudomorphic quantum wells with increasing donor concentration analyzed in a temperature range 2-300K. Hall effect and Shubnikov-de Haas oscillations studied at low temperatures. Temperature dependences of electron sheet concentration differ: samples with higher doping show significant increase of electron consentration at high temperature, while for the lightly doped it has a minor temperature sensitivity due to the band peculiarities of donor ionization. Electron mobility increases and then decreases at higher electron concentration, although the second quantum well subband remains unpopulated.